A 26GHz Balun-First Three-Way Doherty PA in 40nm CMOS with 20.7 dBm Psat and 20dB Power Gain

Conference paper (2023)

Authors

A.K. Kumaran Electronics - EEMCS
M. Pashaeifar Electronics - EEMCS
Hossein Mashad Nemati Huawei Technologies
L.C.N. de Vreede Electronics - EEMCS
S.M. Alavi Electronics - EEMCS
Research Group
Electronics (EEMCS) (TU Delft)
Copyright: © 2023 A.K. Kumaran, M. Pashaeifar, Hossein Mashad Nemati, L.C.N. de Vreede, S.M. Alavi
DOI: https://doi.org/10.1109/RFIC54547.2023.10186161
Doherty Compact 3-stage Power amplifier Lumped components Millimeter wave Norton transformation
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Published Date

2023

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronics

Abstract

This paper presents a 40nm CMOS mm-wave 3-way Doherty power amplifier (PA) suitable for 5G mm-wave transmitters. It features a bandwidth-enhanced technique using a compact single-supply balun-first 3-way Doherty combiner. The realized front-end with a core area of 0.77 mm2delivers a peak power/gain of more than 20 dBm/16 dB and a drain efficiency (DE) of better than 15 %/22 %/33 % at 9.5 dB/6 dB/0 dB power back-off across a 24-to-30 GHz band. At 26 GHz, it achieves an EVM/ACLR of -23.5 dB/-29.5 dBc for an 800MHz 64-OFDM signal with 9.8 dBm average output power and a 15 % average DE.