Title
A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit
Author
Zhang, Jingping (Chongqing University)
Luo, Houcai (Chongqing University)
Wu, Huan (Chongqing University)
Wang, Zeping (Chongqing University)
Zheng, Bofeng (Chongqing University)
Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials) 
Chen, Xianping (Chongqing University)
Date
2023
Abstract
A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device. The gate-to-drain capacitance (Cgd) and gate-to-drain charge (Qgd) of the MSGT-MOSFET are significantly reduced in comparison with the double trench MOSFET (DT-MOSFET) and the conventional SGT MOSFET (CSGT-MOSFET), due to the reduction of the overlapping area of the split gate (SG) structure and drift region. Therefore, the obtained high frequency figure of merit (HF-FOM) defined as [Ron × Cgd] reduced by 23.9% compared with DT-MOSFET and CSGT-MOSFET. And the HF-FOM [Ron × Qgd] for the MSGT-MOSFET significantly decreased by 71% and 50%, respectively, compared to that of the DT-MOSFET and CSGT-MOSFET. Furthermore, the switching loss is also simulated and calculated. And the total switching loss of the proposed MSGT-MOSFET realizes 42.9% and 21.7% reduction in comparison with the DT-MOSFET and CSGT-MOSFET. The overall enhanced performances suggest that the MSGT-MOSFET is an excellent choice for high frequency power electronic applications.
Subject
4H-SiC MOSFET
Cgd
HF-FOM
Qgd
SG
switching loss
To reference this document use:
http://resolver.tudelft.nl/uuid:ee2d471b-2b4a-490d-95b8-85b494d7a503
DOI
https://doi.org/10.1088/1402-4896/ad049b
Embargo date
2024-06-03
ISSN
0031-8949
Source
Physica Scripta: an international journal for experimental and theoretical physics, 98 (12)
Bibliographical note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
Part of collection
Institutional Repository
Document type
journal article
Rights
© 2023 Jingping Zhang, Houcai Luo, Huan Wu, Zeping Wang, Bofeng Zheng, Kouchi Zhang, Xianping Chen