Print Email Facebook Twitter Fast Etching of Molding Compound by an Ar/O2/CF4 Plasma and Process Improvements for Semiconductor Package Decapsulation Title Fast Etching of Molding Compound by an Ar/O2/CF4 Plasma and Process Improvements for Semiconductor Package Decapsulation Author Tang, J. Gruber, D. Schelen, J.B.J. Funke, H.J. Beenakker, C.I.M. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2012-08-24 Abstract Decapsulation of a SOT23 semiconductor package with 23 um copper wire bonds is conducted with an especially designed microwave induced plasma system. It is found that a 30%-60% CF4 addition in the O2/CF4 etchant gas results in high molding compound etching rate. Si3N4 overetching which is encountered in plasma decapsulation is solved by an improved etching process. Critical processing parameters are investigated and 350 um thick molding compound on top of the die is removed selectively by pure plasma etching for 6 minutes, which is at least 10 times faster than conventional plasma etchers. To reference this document use: http://resolver.tudelft.nl/uuid:f257d2d7-06b3-41e4-a6ba-51262e187059 DOI https://doi.org/10.1149/2.019204jss Publisher Electrochemical Society ISSN 2162-8769 Source ECS Journal of Solid State Science and Technology, 1 (4), 2012 Part of collection Institutional Repository Document type journal article Rights © 2012 Electrochemical Society Files PDF Tang_2012.pdf 1.46 MB Close viewer /islandora/object/uuid:f257d2d7-06b3-41e4-a6ba-51262e187059/datastream/OBJ/view