Print Email Facebook Twitter Silicon quantum electronics Title Silicon quantum electronics Author Zwanenburg, F.A. Dzurak, A.S. Morello, A. Simmons, M.Y. Hollenberg, L.C.L. Klimeck, G. Rogge, S. Coppersmith, S.N. Eriksson, M.A. Faculty Applied Sciences Department QN/Quantum Nanoscience Date 2013-07-10 Abstract This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development of Si quantum devices, and the physical understanding of quantum effects in silicon. Recent critical steps include the isolation of single electrons, the observation of spin blockade, and single-shot readout of individual electron spins in both dopants and gated quantum dots in Si. Each of these results has come with physics that was not anticipated from previous work in other material systems. These advances underline the significant progress toward the realization of spin quantum bits in a material with a long spin coherence time, crucial for quantum computation and spintronics. To reference this document use: http://resolver.tudelft.nl/uuid:3b2b7754-aca4-4a79-989d-91d5aa10fbb9 DOI https://doi.org/10.1103/RevModPhys.85.961 Publisher American Physical Society ISSN 0034-6861 Source http://link.aps.org/doi/10.1103/RevModPhys.85.961 Source Reviews of Modern Physics, 85 (3), 2013 Part of collection Institutional Repository Document type journal article Rights (c) 2013 The Author(s)American Physical Society Files PDF Rogge_2013.pdf 22.43 MB Close viewer /islandora/object/uuid:3b2b7754-aca4-4a79-989d-91d5aa10fbb9/datastream/OBJ/view