Print Email Facebook Twitter Characterization of room temperature metal microbolometers near the metal-insulator transition regime for scanning thermal microscopy Title Characterization of room temperature metal microbolometers near the metal-insulator transition regime for scanning thermal microscopy Author Gaitas, A. Zhu, W. Gulari, N. Covington, E. Kurdak, C. Faculty Electrical Engineering, Mathematics and Computer Science Date 2009-10-16 Abstract Metal microbolometers, used in scanning thermal microscopy, were microfabricated from <20?nm titanium thin films on SiO2/Si3N4/SiO2 cantilevers. These thin films are near the metal-insulator transition regime such that as the film thickness decreases—the resistance increases and the current-voltage characteristics cross over from sublinear to superlinear. In addition, the temperature coefficient of resistance transitions from positive to negative before it plateaus at a negative value. Thin titanium films exhibit negative temperature coefficient of resistance as high as ?0.0067/K which is higher than that of bulk titanium films. Subject bolometerscantileversmetal-insulator transitionmetallic thin filmsmicrofabricationmicroscopytitanium To reference this document use: http://resolver.tudelft.nl/uuid:67f97c86-80d9-4f75-9bb8-9f40f670ea22 DOI https://doi.org/10.1063/1.3250434 Publisher American Institute of Physics ISSN 0003-6951 Source http://link.aip.org/link/APPLAB/v95/i15/p153108/s1 Source Applied Physics Letters, 95 (15), 2009 Part of collection Institutional Repository Document type journal article Rights (c) 2009 The Author(s); American Institute of Physics Files PDF Gaitas_2009.pdf 258.16 KB Close viewer /islandora/object/uuid:67f97c86-80d9-4f75-9bb8-9f40f670ea22/datastream/OBJ/view