Interfacial conduction in organic ferroelectric memory diodes

Interfacial conduction in organic ferroelectric memory diodes

Sharifi Dehsari, Hamed (Max Planck Institute for Polymer Research)
Kumar, Manasvi (Max Planck Institute for Polymer Research)
Ghittorelli, Matteo (Università di Brescia)
Glasser, Gunnar (Max Planck Institute for Polymer Research)
Lenz, Thomas (Max Planck Institute for Polymer Research)
de Leeuw, D.M. (TU Delft Novel Aerospace Materials)
Torricelli, Fabrizio (Università di Brescia)
Asadi, Kamal (Max Planck Institute for Polymer Research)

2018-08-27

Solution-processed memory diodes based on phase separated blends of ferroelectric and semiconducting polymers in the low resistance on-state operate similar to a vertical field-effect transistor at the pinch-off. Numerical simulations have shown that the performance of the diode is dominated by the conduction of charge carriers at the interface between the semiconductor and ferroelectric phases. Here, we present an unambiguous experimental demonstration of the charge injection process in the diodes. We employ a modified diode structure, wherein the electrode in contact with the semiconductor phase has been intentionally removed. Even in the absence of an electrical contact with the semiconductor phase, the diode still shows resistance switching. We provide numerical simulations that reproduce the experimentally measured I-V characteristics and therefore confirm interfacial conduction in the diodes. Furthermore, we discuss the implications of the proposed memory structure particularly in the performance of light-emitting diodes with built-in memory functionality, i.e., MEMOLEDs.

http://resolver.tudelft.nl/uuid:828188b8-c656-4b7c-9e84-80bea974f542

https://doi.org/10.1063/1.5043244

2019-06-30

0003-6951

Applied Physics Letters, 113 (9)

Institutional Repository

journal article

© 2018 Hamed Sharifi Dehsari, Manasvi Kumar, Matteo Ghittorelli, Gunnar Glasser, Thomas Lenz, D.M. de Leeuw, Fabrizio Torricelli, Kamal Asadi