Artificial Dielectric Layer Based on PECVD Silicon Carbide for Terahertz Sensing Applications

Artificial Dielectric Layer Based on PECVD Silicon Carbide for Terahertz Sensing Applications

Fiorentino, G.
Syed, W.
Adam, A.
Neto, A.
Sarro, P.M.

Electrical Engineering, Mathematics and Computer Science

Microelectronics

2014-12-31

The refractive index of a conventional dielectric layer can be enhanced using an Artificial Dielectric Layer (ADL). Here we present the fabrication of low temperature PECVD Silicon Carbide (SiC) membranes with very high refractive index (up to 5 at 1 THz) in the terahertz frequency range. The SiC deposition parameters have been tuned to reach a very low residual stress level (-25 to 100 MPa). The excellent mechanical properties of this material allowed the fabrication of very large square membranes (5 mm side) with a thickness from 5 ?m to 10 ?m. Using silicon carbide as host material, ADL with a refractive index of 9.9 at 1 THz can be effectively realized.

terahertz sensing
silicon carbide
Artificial Dielectric Layer

http://resolver.tudelft.nl/uuid:aa0ca941-e528-4f1a-b382-f82ab275b73f

https://doi.org/10.1016/j.proeng.2014.11.582

Elsevier

Procedia Engineering, 87, 2014; EUROSENSORS 2014, the 28th European Conference on Solid-State Transducers

Institutional Repository

journal article

© 2014 The Authors
This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/)