Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

Meijer, E.J.
Gelinck, G.H.
Van Veenendaal, E.
Huisman, B.H.
De Leeuw, D.M.
Klapwijk, T.M.

Applied Sciences

Kavli Institute of Nanoscience

2003-06-23

The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we determine the field-effect mobility and the parasitic series resistance. The extracted parasitic resistance, typically in the M? range, depends on the applied gate voltage, and we find experimentally that the parasitic resistance decreases with increasing field-effect mobility.

organic semiconductors
thin film transistors,
semiconductor device measurement
field effect transistors
carrier mobility
amorphous semiconductors

http://resolver.tudelft.nl/uuid:cbf16ff2-1a3d-4dbb-be14-5a748f7b5f60

https://doi.org/10.1063/1.1581389

American Institute of Physics

0003-6951

http://link.aip.org/link/APPLAB/v82/i25/p4576/s1

Applied Physics Letters, 82 (25), 2003

Institutional Repository

journal article

(c) 2003 The Author(s); American Institute of Physics