Solid-phase crystallization of ultra high growth rate amorphous silicon films

In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11–60?nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain (?1.5??m) polycrystalline silicon was obtained after SPC of high growth rate (?25?nm/s) deposited a-Si:H films. The...

Stress in sputter-deposited Cr films: Influence of Ar pressure

We studied the tensile stress and grain-width evolution in sputter-deposited Cr films with thickness from 20?nm to 2.7??m. Films were deposited in an industrial Hauzer 750 physical vapor deposition machine at 50–80?°C. The films exhibited a columnar microstructure. A power law behavior of the tensile stress as well as of the average grain width...