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Nanver, L.K. (author), Sammak, A. (author), Mohammadi, V. (author), Mok, K.R.C. (author), Qi, L. (author), Sakic, A. (author), Golshani, N. (author), Darakhshandeh, J. (author), Scholtes, T.M.L. (author), De Boer, W.B. (author)Envisioning wide future relevance, work is reviewed here on the pure dopant deposition of boron (PureB), gallium (PureGa) and the combination of the two (PureGaB), as used in the fabrication of nanometer shallow p+n Si and/or Ge diodes. Focus is placed on the special properties that have put these diodes in a class apart: their ideal electrical...journal article 2012
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Mok, K.R.C. (author), Nanver, L.K. (author), De Boer, W.D. (author), Vlooswijk, A.H.G. (author)In order to transfer the CVD process from a singlewafer epitaxial reactor to a batch furnace system, several issues have to be considered. The main process issue is that PureB deposition is highly-selective, depositing only on silicon and not silicon dioxide. Silicon surface has to be free of native oxide and oxidation must be prevented during...conference paper 2011