Print Email Facebook Twitter (Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices Title (Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices Author Nanver, L.K. Sammak, A. Mohammadi, V. Mok, K.R.C. Qi, L. Sakic, A. Golshani, N. Darakhshandeh, J. Scholtes, T.M.L. De Boer, W.B. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2012-12-31 Abstract Envisioning wide future relevance, work is reviewed here on the pure dopant deposition of boron (PureB), gallium (PureGa) and the combination of the two (PureGaB), as used in the fabrication of nanometer shallow p+n Si and/or Ge diodes. Focus is placed on the special properties that have put these diodes in a class apart: their ideal electrical behavior together with their electrical, optical and chemical robustness have lead to cutting-edge application as photodiodes for detecting low-penetration-depth beams, as for example in EUV lithography and low-energy electron SEM imaging. Of key importance is the effectively high Gummel number of the p+-region that provides low saturation currents despite the shallowness of the junctions. Based on experimental evidence it is proposed here that this is related to the formation of a practically complete surface coverage of acceptor states as an interface property of PureB on Si and PureGa on both Si and Ge. To reference this document use: http://resolver.tudelft.nl/uuid:e0e4fc8a-cff2-4e45-8fa8-aff79b13ff92 DOI https://doi.org/10.1149/04901.0025ecst Publisher Electrochemical Society ISSN 1938-5862 Source ECS Transactions, 49 (1), 2012 Part of collection Institutional Repository Document type journal article Rights © 2012 The Electrochemical Society Files PDF Nanver_2012.pdf 1.91 MB Close viewer /islandora/object/uuid:e0e4fc8a-cff2-4e45-8fa8-aff79b13ff92/datastream/OBJ/view