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Fu, S. (author), Li, M. (author), Asperti, S. (author), de Jong, W. (author), Kortlever, R. (author)
N-doped carbon materials can be efficient and cost-effective catalysts for the electrochemical CO<sub>2</sub> reduction reaction (CO<sub>2</sub>RR). Activators are often used in the synthesis process to increase the specific surface area and porosity of these carbon materials. However, owing to the diversity of activators and the differences...
journal article 2023
document
Geuchies, J.J. (author), Dijkhuizen, Robbert (author), Koel, Marijn (author), Grimaldi, G. (author), du Fossé, I. (author), Evers, W.H. (author), Hens, Zeger (author), Houtepen, A.J. (author)
Colloidal nanoplatelets (NPLs) are promising materials for lasing applications. The properties are usually discussed in the framework of 2D materials, where strong excitonic effects dominate the optical properties near the band edge. At the same time, NPLs have finite lateral dimensions such that NPLs are not true extended 2D structures. Here...
journal article 2022
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Geuchies, J.J. (author), Brynjarsson, Baldur (author), Grimaldi, G. (author), Gudjónsdóttir, S. (author), van der Stam, W. (author), Evers, W.H. (author), Houtepen, A.J. (author)
Solution-processed quantum dot (QD) lasers are one of the holy grails of nanoscience. They are not yet commercialized because the lasing threshold is too high: one needs &gt;1 exciton per QD, which is difficult to achieve because of fast nonradiative Auger recombination. The threshold can, however, be reduced by electronic doping of the QDs,...
journal article 2020
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Limodio, G. (author), Yang, G. (author), De Groot, Yvar (author), Procel, Paul (author), Mazzarella, L. (author), Weber, Arthur W. (author), Isabella, O. (author), Zeman, M. (author)
In this work, we develop SiO<sub>x</sub>/poly-Si carrier-selective contacts grown by low-pressure chemical vapor deposition and boron or phosphorus doped by ion implantation. We investigate their passivation properties on symmetric structures while varying the thickness of poly-Si in a wide range (20-250 nm). Dose and energy of implantation...
journal article 2020
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Fadlallah, M. M. (author), Shibl, M. F. (author), Vlugt, T.J.H. (author), Schwingenschlögl, U. (author)
The large band gap of SrTiO<sub>3</sub> is disadvantageous for photocatalytic applications. We therefore study cation codoping to modify the size of the band gap and extend the absorption to visible light. We identify efficient codoping schemes that guarantee charge compensation to avoid creation of localized states. Using the Heyd-Scuseria...
journal article 2018
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Yi, W. (author), Kiselev, A.A. (author), Thorp, J. (author), Noah, R. (author), Nguyen, B.M. (author), Bui, S. (author), Rajavel, R.D. (author), Hussain, T. (author), Gyure, M.F. (author), Kratz, P. (author), Qian, Q. (author), Manfra, M.J. (author), Pribiag, V.S. (author), Kouwenhoven, L.P. (author), Marcus, C.M. (author), Sokolich, M. (author)
Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200?000?cm2/V?s is measured at T?=?1.8?K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is...
journal article 2015
document
Khodyuk, I.V. (author), Quarati, F.G.A. (author), Alekhin, M.S. (author), Dorenbos, P. (author)
The scintillation response of LaBr3:Ce scintillation crystals was studied as function of temperature and Ce concentration with synchrotron X-rays between 9?keV and 100?keV. The results were analyzed using the theory of carrier transport in wide band gap semiconductors to gain new insights into charge carrier generation, diffusion, and capture...
journal article 2013
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Aravind, P.V. (author), Ouweltjes, J.P. (author), Schoonman, J. (author)
journal article 2009
document
Wagner, K.E. (author), Morosan, E. (author), Hor, Y.S. (author), Tao, J. (author), Zhu, Y. (author), Sanders, T. (author), McQueen, T.M. (author), Zandbergen, H.W. (author), Williams, A.J. (author), West, D.V. (author), Cava, R.J. (author)
We report the characterization of layered 2H-type CuxTaS2 for 0?x?0.12. The charge density wave (CDW), at 70 K for TaS2, is destabilized with Cu doping. The sub-1 K superconducting transition in undoped 2H-TaS2 jumps quickly to 2.5 K at low x, increases to 4.5 K at the optimal composition Cu0.04TaS2, and then decreases at higher x. The...
journal article 2008
document
Selling, J. (author), Schweizer, S. (author), Birowosuto, M.D. (author), Dorenbos, P. (author)
Single crystals of Ce-activated BaCl2, BaBr2, and BaI2 were investigated under x-ray and ?-ray excitation. The Ce3+-related x-ray excited luminescence in BaBr2 shifts significantly to longer wavelengths upon increasing the doping level from 0.1% to 1%. In Ce-activated BaCl2 only a slight shift can be observed. BaI2 does not show any Ce3+-related...
journal article 2007
document
Venugopal, V. (author), Seijbel, L.J. (author), Thijsse, B.J. (author)
Thermal helium desorption spectrometry (THDS) has been used for the investigation of defects and thermal stability of thin Cu films (5–200?Å) deposited on a polycrystalline Mo substrate in ultrahigh vacuum. These films are metastable at room temperature. On heating, the films transform into islands, giving rise to a relatively broad peak in the...
journal article 2005
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