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Mahmoud, A.N.N. (author), Cucu Laurenciu, N. (author), Vanderveken, Frederic (author), Ciubotaru, Florin (author), Adelmann, Christoph (author), Cotofana, S.D. (author), Hamdioui, S. (author)In the early stages of a novel technology development, it is difficult to provide a comprehensive assessment of its potential capabilities and impact. Nevertheless, some preliminary estimates can be drawn and are certainly of great interest and in this paper we follow this line of reasoning within the framework of the Spin Wave (SW) based...conference paper 2022
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Bernardi, P. (author), Cantoro, R. (author), Coyette, A. (author), Dobbeleare, W. (author), Fieback, M. (author), Floridia, A. (author), Gielenk, G. (author), Guerriero, A. M. (author), Hamdioui, S. (author)Electronics employed in modern safety-critical systems require severe qualification during the manufacturing process and in the field, to prevent fault effects from manifesting themselves as critical failures during mission operations. Traditional fault models are not sufficient anymore to guarantee the required quality levels for chips...conference paper 2022
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Gebregiorgis, A.B. (author), Wu, L. (author), Münch, Christopher (author), Rao, Siddharth (author), Tahoori, Mehdi B. (author), Hamdioui, S. (author)STT-MRAM has long been a promising non-volatile memory solution for the embedded application space owing to its attractive characteristics such as non-volatility, low leakage, high endurance, and scalability. However, the operating requirements for high-performance computing (HPC) and low power (LP) applications involve different challenges....conference paper 2022
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Wu, L. (author), Rao, Siddharth (author), Taouil, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)Understanding the defects in magnetic tunnel junctions (MTJs) and their faulty behaviors are paramount for developing high-quality tests for STT-MRAM. This paper characterizes and models intermediate (IM) state defects in MTJs; IM state manifests itself as an abnormal third resistive state, apart from the two bi-stable states of MTJ. We...conference paper 2021
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Köylü, T.C. (author), Okkerman, Hans (author), Reinbrecht, Cezar (author), Hamdioui, S. (author), Taouil, M. (author)Internet of things (IoT) devices are appearing in all aspects of our digital life. As such, they have become prime targets for attackers and hackers. An adequate protection against attacks is only possible when the confidentiality and integrity of the data and applications of these devices are secured. State-of-the-art solutions mostly address...conference paper 2021
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Caetano Garaffa, L. (author), Aljuffri, A.A.M. (author), Reinbrecht, Cezar (author), Hamdioui, S. (author), Taouil, M. (author), Sepulveda, Johanna (author)Spiking Neural Networks (SNNs) are a strong candidate to be used in future machine learning applications. SNNs can obtain the same accuracy of complex deep learning networks, while only using a fraction of its power. As a result, an increase in popularity of SNNs is expected in the near future for cyber physical systems, especially in the...conference paper 2021
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Cardoso Medeiros, G. (author), Fieback, M. (author), Copetti, Thiago (author), Gebregiorgis, A.B. (author), Taouil, M. (author), Bolzani Poehls, L. M. (author), Hamdioui, S. (author)Manufacturing defects in FinFET SRAMs can cause hard-to-detect faults such as Undefined State Faults (USFs). Detection of USFs is not trivial, as they may not lead to incorrect functionality. Nevertheless, undetected USFs may have a severe impact on the memory's quality: they can cause random read outputs, which might lead to test escapes and no...conference paper 2021
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Wu, L. (author), Rao, Siddharth (author), Taouil, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)Understanding the manufacturing defects in magnetic tunnel junctions (MTJs), which are the data-storing elements in STT-MRAMs, and their resultant faulty behaviors are crucial for developing high-quality test solutions. This paper introduces a new type of MTJ defect: synthetic anti-ferromagnet flip (SAFF) defect, wherein the magnetization in...conference paper 2021
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Taouil, M. (author), Reinbrecht, Cezar (author), Hamdioui, S. (author), Sepulveda, Johanna (author)Dynamic Random Access Memory (DRAM)-based systems are widely used in mobile and portable applications where low-cost and high-storage memory capability are required. However, such systems are prone to attacks. A latent threat to DRAM-based system security is the so-called Rowhammer attacks. By repeatedly accessing memory, an attacker is able to...conference paper 2021
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Mahmoud, A.N.N. (author), Vanderveken, Frederic (author), Ciubotaru, Florin (author), Adelmann, Christoph (author), Cotofana, S.D. (author), Hamdioui, S. (author)Spin Waves (SWs) propagate through magnetic waveguides and interfere with each other without consuming noticeable energy, which opens the road to new ultra-low energy circuit designs. In this paper we build upon SW features and propose a novel energy efficient Full Adder (FA) design consisting of 1 Majority and 2 XOR gates, which outputs Sum...conference paper 2021
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Fieback, M. (author), Cardoso Medeiros, G. (author), Gebregiorgis, A.B. (author), Aziza, Hassen (author), Taouil, M. (author), Hamdioui, S. (author)Industry is prototyping and commercializing Resistive Random Access Memories (RRAMs). Unfortunately, RRAM devices introduce new defects and faults. Hence, high-quality test solutions are urgently needed. Based on silicon measurements, this paper identifies a new RRAM unique fault, the Intermittent Undefined State Fault (IUSF); this fault causes...conference paper 2021
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Mahmoud, A.N.N. (author), Vanderveken, Frederic (author), Adelmann, Christoph (author), Ciubotaru, Florin (author), Hamdioui, S. (author), Cotofana, S.D. (author)By their very nature, voltage/current excited Spin Waves (SWs) propagate through waveguides without consuming noticeable power. If SW excitation is performed by the continuous application of voltages/currents to the input, which is usually the case, the overall energy consumption is determined by the transducer power and the circuit critical...conference paper 2021
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Cardoso Medeiros, G. (author), Fieback, M. (author), Gebregiorgis, A.B. (author), Taouil, M. (author), Bolzani Poehls, L. (author), Hamdioui, S. (author)Manufacturing defects in FinFET SRAMs can cause hard-to-detect faults such as Random Read Faults (RRFs). Detection of RRFs is not trivial, as they may not lead to incorrect outputs. Undetected RRFs become test escapes, which might lead to no-trouble-found devices and early in-field failures. Therefore, the detection of RRFs is of utmost...conference paper 2021
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Mahmoud, A.N.N. (author), Adelmann, Christoph (author), Vanderveken, Frederic (author), Cotofana, S.D. (author), Ciubotaru, Florin (author), Hamdioui, S. (author)Having multi-output logic gates saves much energy because the same structure can be used to feed multiple inputs of next stage gates simultaneously. This paper proposes novel triangle shape fanout of 2 spin wave Majority and XOR gates; the Majority gate is achieved by phase detection, whereas the XOR gate is achieved by threshold detection. The...conference paper 2021
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Diware, S.S. (author), Gebregiorgis, A.B. (author), Joshi, Rajiv V. (author), Hamdioui, S. (author), Bishnoi, R.K. (author)Emerging memristor-based computing has the potential to achieve higher computational efficiency over conventional architectures. Bit-slicing scheme, which represents a single neural weight using multiple memristive devices, is usually introduced in memristor-based neural networks to meet high bit-precision demands. However, the accuracy of such...conference paper 2021
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Balakrishnan, Aneesh (author), Cardoso Medeiros, G. (author), Cem Gursoy, Cemil (author), Hamdioui, S. (author), Jenihhin, Maksim (author), Alexandrescu, Dan (author)The Soft-Error (SE) reliability and the effects of Negative Bias Temperature Instability (NBTI) in deep submicron technologies are characterized as the major critical issues of high-performance integrated circuits. The previous scientific research studies provide a comprehensive description that the soft-error vulnerability becomes more severe...conference paper 2021
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Mahmoud, A.N.N. (author), Vanderveken, Frederic (author), Ciubotaru, Florin (author), Adelmann, Christoph (author), Cotofana, S.D. (author), Hamdioui, S. (author)By their very nature, Spin Waves (SWs) consume ultra-low amounts of energy, which makes them suitable for ultra-low energy consumption applications. In addition, a compressor can be utilized to further reduce the energy consumption and enhance the speed of a multiplier. Therefore, we propose a novel energy efficient SW based 4-2 compressor...conference paper 2021
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Köylü, T.C. (author), Reinbrecht, Cezar (author), Hamdioui, S. (author), Taouil, M. (author)Artificial neural networks are currently used for many tasks, including safety critical ones such as automated driving. Hence, it is very important to protect them against faults and fault attacks. In this work, we propose two fault injection attack detection mechanisms: one based on using output labels for a reference input, and the other on...conference paper 2021
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Bosio, A. (author), O'Connor, I. (author), Rodrigues, G. S. (author), Lima, F. K. (author), Hamdioui, S. (author)Today's computer architectures and semiconductor technologies are facing major challenges making them incapable to deliver the required features (such as computer efficiency) for emerging applications. Alternative architectures are being under investigation in order to continue deliver sustainable benefits for the foreseeable future society...conference paper 2020
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Copetti, Thiago (author), Cardoso Medeiros, G. (author), Taouil, M. (author), Hamdioui, S. (author), Poehls, Leticia Bolzani (author), Balen, Tiago (author)Fin Field-Effect Transistor (FinFET) technology enables the continuous downscaling of Integrated Circuits (ICs), using the Complementary Metal-Oxide Semiconductor (CMOS) technology in accordance with the More Moore domain. Despite demonstrating improvements on short channel effect and overcoming the growing leakage problem of planar CMOS...conference paper 2020