Searched for: +
(1 - 4 of 4)
document
Meng, Li (author), Zhao, Panpan (author), Jiang, Yucheng (author), You, Jiawen (author), Xu, Zhiyan (author), Yu, K. (author), Boccaccini, Aldo R. (author), Ma, Junqing (author), Zheng, K. (author)
Bioactive glass nanoparticles (BGNs) are well-recognized multifunctional biomaterials for bone tissue regeneration due to their capability to stimulate various cellular processes through released biologically active ions. Understanding the correlation between BGN composition and cellular responses is key to developing clinically usable BGN...
journal article 2024
document
Ling, Ziji (author), Guo, Songsong (author), Xie, Hanyu (author), Chen, Xinyu (author), Yu, K. (author), Jiang, Hongbing (author), Xu, Rongyao (author), Wu, Yunong (author), Zheng, K. (author)
Bisphosphonates (BPs) are commonly used to treat skeletal diseases. However, long-term use of BPs can lead to BP-related jaw bone necrosis (BRONJ), particularly in patients undergoing tooth extraction surgery. The treatment of BRONJ remains challenging due to the local inflammatory microenvironment. To address this issue, we developed...
journal article 2024
document
Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Y. (author), Yang, Gaiying (author), Yu, H. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H 2 response at high...
journal article 2020
document
Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Yang (author), Yang, Gaiying (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high...
journal article 2020
Searched for: +
(1 - 4 of 4)