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Perinetti, U. (author), Akopian, N. (author), Samsonenko, Y.B. (author), Bouravleuv, A.D. (author), Cirlin, G.E. (author), Zwiller, V. (author)We report on optical studies of single InAs quantum dots grown on vicinal GaAs(001) surfaces. To ensure low quantum dot density and appropriate size, we deposit InAs layers 1.4 or 1.5 ML thick, thinner than the critical thickness for Stranski–Krastanov quantum dot formation. These dots show sharp and bright photoluminescence. Lifetime...journal article 2009
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Christova, C.G. (author), Stouwdam, J.W. (author), Eijkemans, T.J. (author), Silov, A.Y. (author), Van der Heijden, R.W. (author), Kemerink, M. (author), Janssen, R.A.J. (author), Salemink, H.W.M. (author)Remarkable photoluminescence enhancement (PLE) in submonolayer films of PbSe nanocrystals (NCs) upon continuous illumination was observed. The intensity increase from films on InP substrates was highest in vacuum, while for films on Si/SiO2 substrates the PLE was stronger in air. The magnitude of the PLE was found to depend on the excitation...journal article 2008