- document
-
Smit, M.A. (author)This MSc research is focussed upon two aspects. The first focus is to identify and classify tectonometamorphic signals and to establish their significance with respect to the dynamics of the Iapetus Ocean before late-Caledonian (Scandian) closure and concurrent (ultra-) high pressure ((U)HP) metamorphism. The second focus is to monitor...report 2006
- document
- Quak, B. (author), Smit, J.J. (author), Gulski, E. (author) conference paper 2006
- document
- Smit, Arjan (author) master thesis 2006
- document
- Bodega, R. (author), Morshuis, P.H.F. (author), Smit, J.J. (author) journal article 2006
- document
- Jongen, R.A. (author), Morshuis, P.H.F. (author), Gulski, E. (author), Smit, J.J. (author), Maksymiuk, J. (author), Janssen, A.L.J. (author) journal article 2006
- document
- Bodega, R. (author), Morshuis, P.H.F. (author), Smit, J.J. (author) journal article 2006
- document
- Meijer, S. (author), Smit, J.J. (author), Girodet, A. (author) conference paper 2006
- document
- Morshuis, P.H.F. (author), Smit, J.J. (author) journal article 2005
- document
- Meijer, S. (author), Smit, J.J. (author) journal article 2005
- document
- Gulski, E. (author), Smit, J.J. (author), Wester, F.J. (author) journal article 2005
- document
-
Smit, G.D.J. (author)A dopant atom in a semiconductor, the solid state analogue of a hydrogen atom, has a Bohr radius of several nanometers. Because this length scale is close to being accessible by modern nanolithography, detection and control of charge and spin in a semiconductor down to the level of individual dopant atoms is within reach and provides the unique...doctoral thesis 2004
- document
- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2004
- document
- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2004
- document
- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2004
- document
- Caro, J. (author), Vink, I.D. (author), Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author), Loo, R. (author), Caymax, M. (author) journal article 2004
- document
- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2003
- document
-
Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with...journal article 2002
- document
-
Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...journal article 2002
- document
- van Bolhuis, J.P. (author), Gulski, E. (author), Smit, J.J. (author) journal article 2002
- document
- den Besten, J.H. (author), Dessens, M.P. (author), Herben, C.G.P. (author), Leijtens, X.J.M. (author), Groen, F.H. (author), Leys, M.R. (author), Smit, M.K. (author) journal article 2002