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Zhao, Pengjun (author), Zeng, Liangen (author), Li, Peilin (author), Lu, Haiyan (author), Hu, Haoyu (author), Li, Chengming (author), Zheng, Mengyuan (author), Li, Haitao (author), Yu, Zhao (author), Qi, Y. (author)The threat of global climate change has caused the international community to pay close attention to atmospheric levels of greenhouse gases such as carbon dioxide. Transportation sector carbon dioxide emissions efficiency (TSCDEE) is a key indicator used to prioritize sustainable development in the transportation sector. In this paper, the...journal article 2022
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Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Y. (author), Yang, Gaiying (author), Yu, H. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H 2 response at high...journal article 2020
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Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Yang (author), Yang, Gaiying (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high...journal article 2020