In Situ Annealing of Boron-Doped Amorphous Silicon Layers Using APCVD Technology

In this work, we developed an in situ annealing process to crystallize boron-doped amorphous silicon [a-Si(p+)] layers deposited by atmospheric pressure chemical vapour deposition (APCVD) to form boron-doped polycrystalline silicon [poly-Si(p+)] layers. The influence of the temperature profiles during a-Si(p+) inline deposition on structural,...

Mitigating Cut Losses in Interdigitated Back Contact Solar Cells

The edge recombination losses of crystalline silicon solar cells become significant when they are cut into smaller pieces to be assembled into modules. With the interdigitated pattern of doped p and n regions on the rear side, the interdigitated back contact (IBC) solar cells can be cut through different doped regions. In this study, the...