Print Email Facebook Twitter In Situ Annealing of Boron-Doped Amorphous Silicon Layers Using APCVD Technology Title In Situ Annealing of Boron-Doped Amorphous Silicon Layers Using APCVD Technology Author Kuruganti, V.V. (TU Delft Photovoltaic Materials and Devices; International Solar Energy Research Center (ISC)) Mazurov, Alexander (SCHMID Group) Seren, Sven (SCHMID Group) Isabella, O. (TU Delft Photovoltaic Materials and Devices) Mihailetchi, Valentin D. (International Solar Energy Research Center (ISC)) Date 2023 Abstract In this work, we developed an in situ annealing process to crystallize boron-doped amorphous silicon [a-Si(p+)] layers deposited by atmospheric pressure chemical vapour deposition (APCVD) to form boron-doped polycrystalline silicon [poly-Si(p+)] layers. The influence of the temperature profiles during a-Si(p+) inline deposition on structural, electrical, and passivation properties was studied in detail. The results show that a-Si(p+) layers can be successfully crystallized by fine-tuning the temperature profiles in the postdeposition zones of the APCVD tool. It was observed that the hydrogenation processes during the fast firing play a significant role in enhancing the passivation quality as well as the electrical properties of the in situ annealed poly-Si(p+) layers. The sheet resistance (Rsh) and implied open circuit voltage (iVoc) of the best in situ annealed poly-Si(p+) layers were found to be comparable to the ones that were ex situ annealed in the tube furnace at 950 $^{\circ }$C for 30 min. The sheet resistance of 200 $\Omega$/$\square$ could be obtained on 150-nm thick poly-Si(p+) layers with an (iVoc) of 718 mV. The use of this novel in situ annealing process to form poly-Si(p+) layers opens a new horizon for a lean process sequence without the additional high-temperature annealing step for fabricating solar cells concepts based on passivating contact. Subject AnnealingannealingAtmospheric pressure chemical vapor depositionAtmospheric pressure chemical vapour deposition (APCVD) technologyPassivationPhotovoltaic cellspolysiliconSiliconTemperature measurementtunnel oxide passivated contacts (TOPCon)X-ray scattering To reference this document use: http://resolver.tudelft.nl/uuid:74932d40-95d8-443d-af96-e0608693e065 DOI https://doi.org/10.1109/JPHOTOV.2023.3323788 Embargo date 2024-04-29 ISSN 2156-3381 Source IEEE Journal of Photovoltaics, 14 (1), 74 - 79 Bibliographical note Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. Part of collection Institutional Repository Document type journal article Rights © 2023 V.V. Kuruganti, Alexander Mazurov, Sven Seren, O. Isabella, Valentin D. Mihailetchi Files PDF In_Situ_Annealing_of_Boro ... nology.pdf 2.6 MB Close viewer /islandora/object/uuid:74932d40-95d8-443d-af96-e0608693e065/datastream/OBJ/view