Searched for: +
(1 - 6 of 6)
document
Fieback, M. (author), Cardoso Medeiros, G. (author), Wu, L. (author), Aziza, Hassen (author), Bishnoi, R.K. (author), Taouil, M. (author), Hamdioui, S. (author)
Resistive RAM (RRAM) is a promising technology to replace traditional technologies such as Flash, because of its low energy consumption, CMOS compatibility, and high density. Many companies are prototyping this technology to validate its potential. Bringing this technology to the market requires high-quality tests to ensure customer...
journal article 2022
document
Cardoso Medeiros, G. (author), Fieback, M. (author), Wu, L. (author), Taouil, M. (author), Bolzani Poehls, L. M. (author), Hamdioui, S. (author)
Manufacturing defects can cause hard-to-detect (HTD) faults in fin field-effect transistor (FinFET) static random access memories (SRAMs). Detection of these faults, such as random read outputs and out-of-spec parametric deviations, is essential when testing FinFET SRAMs. Undetected HTD faults result in test escapes, which lead to early in-field...
journal article 2021
document
Wu, L. (author), Fieback, M. (author), Taouil, M. (author), Hamdioui, S. (author)
This paper introduces a new test approach: device-aware test (DAT) for emerging memory technologies such as MRAM, RRAM, and PCM. The DAT approach enables accurate models of device defects to obtain realistic fault models, which are used to develop high-quality and optimized test solutions. This is demonstrated by an application of DAT to pinhole...
conference paper 2020
document
Cardoso Medeiros, G. (author), Cem Gursoy, Cemil (author), Wu, L. (author), Fieback, M. (author), Jenihhin, Maksim (author), Taouil, M. (author), Hamdioui, S. (author)
Manufacturing defects can cause faults in FinFET SRAMs. Of them, easy-to-detect (ETD) faults always cause incorrect behavior, and therefore are easily detected by applying sequences of write and read operations. However, hard-to-detect (HTD) faults may not cause incorrect behavior, only parametric deviations. Detection of these faults is of...
conference paper 2020
document
Wu, L. (author), Rao, Siddharth (author), Taouil, M. (author), Cardoso Medeiros, G. (author), Fieback, M. (author), Marinissen, Erik Jan (author), Kar, Gouri Sankar (author), Hamdioui, S. (author)
STT-MRAM mass production is around the corner as major foundries worldwide invest heavily on its commercialization. To ensure high-quality STT-MRAM products, effective yet cost-efficient test solutions are of great importance. This article presents a systematic device-aware defect and fault modeling framework for STT-MRAM to derive accurate...
journal article 2019
document
Fieback, M. (author), Wu, L. (author), Cardoso Medeiros, G. (author), Aziza, Hassen (author), Rao, S (author), Marinissen, Erik Jan (author), Taouil, M. (author), Hamdioui, S. (author)
This paper proposes a new test approach that goes beyond cell-aware test, i.e., device-aware test. The approach consists of three steps: defect modeling, fault modeling, and test/DfT development. The defect modeling does not assume that a defect in a device (or a cell) can be modeled electrically as a linear resistor (as the traditional approach...
conference paper 2019
Searched for: +
(1 - 6 of 6)