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Construction of AlGaN/GaN high-electron-mobility transistor-based biosensor for ultrasensitive detection of SARS-CoV-2 spike proteins and virions
Erratum: Electrical characteristics and photodetection mechanism of TiO
2
/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (J. Mater. Chem. C (2023) 11 (1704–1713) DOI: 10.1039/D2TC04491A)
Temporal Network Prediction and Interpretation
Electrical characteristics and photodetection mechanism of TiO
2
/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction
Case-driven category analysis of 3D building property
Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO Sensor Using a Two-Step Gate Recess Technique
Markov-based solution for information diffusion on adaptive social networks
A high responsivity and controllable recovery ultraviolet detector based on a WO
3
gate AlGaN/GaN heterostructure with an integrated micro-heater
Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating
Suspended tungsten trioxide (WO
3
) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater
Coupling dynamics of epidemic spreading and information diffusion on complex networks
Epidemic dynamics on information-driven adaptive networks
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