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Buizert, C. (author), Koppens, F.H.L. (author), Pioro-Ladriere, M. (author), Tranitz, H.P. (author), Vink, I.T. (author), Tarucha, S. (author), Wegscheider, W. (author), Vandersypen, L.M.K. (author)We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs=AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor...journal article 2008
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Vink, I.T. (author), Nooitgedagt, T. (author), Schouten, R.N. (author), Vandersypen, L.M.K. (author), Wegscheider, W. (author)The authors employ a cryogenic high electron mobility transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1?K and the circuit has a bandwidth of 1?MHz. The noise contribution of the HEMT at high frequencies is only a few times higher than...journal article 2007
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- Meunier, T. (author), Vink, I.T. (author), Willems van Beveren, L.H. (author), Tielrooij, K.J. (author), Hanson, R. (author), Koppens, F.H.L. (author), Tranitz, H.P. (author), Wegscheider, W. (author), Kouwenhoven, L.P. (author), Vandersypen, L.M.K. (author) journal article 2007
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Meunier, T. (author), Vink, I.T. (author), Willems van Beveren, L.H. (author), Koppens, F.H.L. (author), Tranitz, H.P. (author), Wegscheider, W. (author), Kouwenhoven, L.P. (author), Vandersypen, L.M.K. (author)We propose and implement a nondestructive measurement that distinguishes between two-electron spin states in a quantum dot. In contrast to earlier experiments with quantum dots, the spins are left behind in the state corresponding to the measurement outcome. By measuring the spin states twice within a time shorter than the relaxation time T1,...journal article 2006