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Limodio, G. (author), Yang, G. (author), Ge, H. (author), Procel Moya, P.A. (author), de Groot, Y. (author), Mazzarella, L. (author), Isabella, O. (author), Zeman, M. (author)
In this work we develop a rear emitter silicon solar cell integrating carrier-selective passivating contacts (CSPCs) with different thermal budget in the same device. The solar cell consists of a B-doped poly-Si/SiO<sub>x</sub> hole collector and an i/n hydrogenated amorphous silicon (a-Si:H) stack acting as electron collector placed on the...
journal article 2019
document
Limodio, G. (author), D'Herouville, G. (author), Mazzarella, L. (author), Zhao, Y. (author), Yang, G. (author), Isabella, O. (author), Zeman, M. (author)
This work shows an alternative surface cleaning method for c-Si wafers to replace the standard chemical procedures as RCA or HNO <sub>3</sub> which involve hazardous chemicals or unstable processes. The method consists in a high-temperature oxidation treatment (HTO) performed in a classical tube furnace that incorporates organic and metal...
journal article 2019
document
Yang, G. (author), Guo, Peiqing (author), Procel Moya, P.A. (author), Weeber, A.W. (author), Isabella, O. (author), Zeman, M. (author)
The poly-Si carrier-selective passivating contacts (CSPCs) parasitically absorb a substantial amount of light, especially in the form of free carrier absorption. To minimize these losses, we developed CSPCs based on oxygen-alloyed poly-Si (poly-SiO<sub>x</sub>) and deployed them in c-Si solar cells. Transmission electron microscopy analysis...
journal article 2018
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Yang, G. (author), Guo, Peiqing (author), Procel Moya, P.A. (author), Limodio, G. (author), Weeber, A.W. (author), Isabella, O. (author), Zeman, M. (author)
In this work, we present the application of poly-Si carrier-selective passivating contacts (CSPCs) as both polarities in interdigitated back-contacted (IBC) solar cell architectures. We compared two approaches to form a gap between the back-surface field (BSF) and emitter fingers. It is proved that the gaps prepared by both approaches are...
journal article 2018
document
Procel Moya, P.A. (author), Yang, G. (author), Isabella, O. (author), Zeman, M. (author)
In this work we present a theoretical analysis of charge carriers transport mechanisms in IBC-SHJ solar cells. The concepts of contact and transport selectivity are correlated through the band bending at c-Si interface and are used to identify thin-film silicon parameters affecting fill factor (FF) and open-circuit voltage (V<sub>OC</sub>)....
journal article 2018
document
Yang, G. (author), Zhang, Y. (author), Procel Moya, P.A. (author), Weeber, A.W. (author), Isabella, O. (author), Zeman, M. (author)
Highest conversion efficiency in crystalline silicon (c-Si) solar cells can be enabled by quenching minority carriers' recombination at c-Si/contact interface owing to carrier-selective passivating contacts. With the semi-insulating poly-crystalline silicon (SIPOS, poly-Si) a very good passivation of c-Si surfaces was obtained. We have...
journal article 2017
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Yang, G. (author), Ingenito, A. (author), Isabella, O. (author), Zeman, M. (author)
Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface recombination, resulting in implied VOC (iVOC) of...
journal article 2016
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Yang, G. (author), Ingenito, A. (author), van Hameren, Nienke (author), Isabella, O. (author), Zeman, M. (author)
Ion-implanted passivating contacts based on poly-crystalline silicon (polySi) are enabled by tunneling oxide, optimized, and used to fabricate interdigitated back contact (IBC) solar cells. Both n-type (phosphorous doped) and p-type (boron doped) passivating contacts are fabricated by ion-implantation of intrinsic polySi layers deposited via low...
journal article 2016
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