Improved ptychographic inspection of EUV reticles via inclusion of prior information

The development of actinic mask metrology tools represents one of the major challenges to be addressed on the roadmap of extreme ultra violet (EUV) lithography. Technological advancements in EUV lithography result in the possibility to print increasingly fine and highly resolved structures on a silicon wafer, however the presence of fine–scale...

Automatic feature selection in EUV scatterometry

Scatterometry is an important nonimaging and noncontact method for optical metrology. In scatterometry certain parameters of interest are determined by solving an inverse problem. This is done by minimizing a cost functional that quantifies the discrepancy among measured data and model evaluation. Solving the inverse problem is mathematically...