- document
-
Chen, Jiaqi (author), Dan, Hancheng (author), Ding, Yongjie (author), Gao, Y. (author), Guo, Meng (author), Guo, Shuaicheng (author), Han, Bingye (author), Hong, Bin (author), Hou, Yue (author), Hu, Chichun (author), Hu, Jing (author), Huyan, Ju (author), Jiang, Jiwang (author), Jiang, Wei (author), Li, Cheng (author), Liu, Pengfei (author), Liu, Yu (author), Liu, Zhuangzhuang (author), Lu, Guoyang (author), Ouyang, Jian (author), Qu, Xin (author), Ren, Dongya (author), Wang, Chao (author), Wang, Chaohui (author), Wang, Dawei (author), Wang, Di (author), Wang, Hainian (author), Wang, Haopeng (author), Xiao, Yue (author), Xing, Chao (author), Xu, Huining (author), Yan, Yu (author), Yang, Xu (author), You, Lingyun (author), You, Zhanping (author), Yu, Bin (author), Yu, Huayang (author), Yu, Huanan (author), Zhang, Henglong (author), Zhang, Jizhe (author), Zhou, Changhong (author), Zhou, Changjun (author), Zhu, Xingyi (author)Sustainable and resilient pavement infrastructure is critical for current economic and environmental challenges. In the past 10 years, the pavement infrastructure strongly supports the rapid development of the global social economy. New theories, new methods, new technologies and new materials related to pavement engineering are emerging....review 2021
- document
-
Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Y. (author), Yang, Gaiying (author), Yu, H. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H 2 response at high...journal article 2020
- document
-
Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Yang (author), Yang, Gaiying (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high...journal article 2020
- document
-
Zhang, Jian (author), Sokolovskij, R. (author), Chen, Ganhui (author), Zhu, Yumeng (author), Qi, Yongle (author), Lin, Xinpeng (author), Li, Wenmao (author), Zhang, G. (author), Jiang, Yu-Long (author), Yu, Hongyu (author)In this paper, a method to extend the detection range of hydrogen sulfide (H<sub>2</sub>S) gas sensor is demonstrated. The sensor is based on AlGaN/GaN high electron mobility transistors (HEMTs) with Pt gate. It is observed that the as-fabricated devices exhibited sensing signal saturation at 30 ppm H<sub>2</sub>S exposure in dry air. A pre...journal article 2019