Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and...

Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (Sbd) by inductively coupled plasma (icp) and device characteristics

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow rate, and chamber pressure, etc. In particular...

Degradation behaviors and in-vivo biocompatibility of a rare earth- and aluminum-free magnesium-based stent

Biodegradable stents can provide scaffolding and anti-restenosis benefits in the short term and then gradually disappear over time to free the vessel, among which the Mg-based biodegradable metal stents have been prosperously developed. In the present study, a Mg-8.5Li (wt.%) alloy (RE- and Al-free) with high ductility (> 40%) was...

Built environment and travel behavior in rural areas: A scientometric literature review

With the rise of global urbanization, the rural built environment has undergone tremendous changes. As such, the rural built environment impacts on residents’ daily travel behavior is getting more researchers’ attention. To date, most of the research focuses on urban areas in developed countries. To understand the state-of-the-art of interplay...

基于Marchenko理论的成像域与数据域层间多次波消除方法对比

Marchenko imaging can be seen as an internal multiple elimination scheme in imaging domain. By solving coupled Marchenko equations, the measured seismic data can be correctly redatumed to the subsurface with source positioned at subsurface and receivers positioned at acquisition surface. Then, the artefact-free image of the source point can...

A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit

A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device...

Investigation of Unclamped Inductive Switch Characteristics in 4H-SiC MOSFETs With Different Cell Topologies

To investigate the unclamped inductive switch (UIS) characteristics, 1200 V silicon carbide (SiC) planar MOSFETs with four cell topologies of linear, current sharing linear, square, and hexagon are designed and manufactured. The experimental platform was built and tested. The results show that the single pulse avalanche energy density of the...

Holistic Processing of Sawdust to Enable Sustainable Hybrid Li-Ion Capacitors

Activated carbon has long been recognized as a promising electrode material for energy storage devices. The extraordinarily high specific area makes it challenging to replace in supercapacitors since electrical double-layer capacitors need such surfaces but also porous networks to enable electrolyte penetration. As a raw material for...