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Zhang, Yingyu (author), Yang, Juan (author), van Haaften, M.A. (author), Li, Linyi (author), Lu, Shenglian (author), Wen, Weiliang (author), Zheng, Xiuguo (author), Pan, Jian (author), Qian, Tingting (author)
Plant photosynthesis and biomass production are associated with the amount of intercepted light, especially the light distribution inside the canopy. Three virtual canopies (n = 80, 3.25 plants/m2) were constructed based on average leaf size of the digitized plant structures: ‘small leaf’ (98.1 cm2), ‘medium leaf’ (163.0 cm2) and ‘big leaf’ (241...
journal article 2022
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An, Tao (author), Mohan, Prashanth (author), Zhang, Yingkang (author), Frey, Sándor (author), Yang, J. (author), Gabányi, Krisztina (author), Gurvits, L. (author), Paragi, Zsolt (author), Perger, Krisztina (author), Zheng, Zhenya (author)
Blazars are a sub-class of quasars with Doppler boosted jets oriented close to the line of sight, and thus efficient probes of supermassive black hole growth and their environment, especially at high redshifts. Here we report on Very Long Baseline Interferometry observations of a blazar J0906 + 6930 at z = 5.47, which enabled the detection of...
journal article 2020
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Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Y. (author), Yang, Gaiying (author), Yu, H. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H 2 response at high...
journal article 2020
document
Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Yang (author), Yang, Gaiying (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high...
journal article 2020
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