Hydrogenated Boron Phosphide with the excellent tunability of electronic properties and Current-Voltage responses

Combining the first principles calculations and the non-equilibrium Green’s function formalisms, we decipher the structural, electronic, and transport properties of boron phosphide (BP) with hydrogenation. Hydrogenated BP monolayer is an indirect semiconductor with a wide-bandgap of 3.76 eV that is favorable in power devices. We find that the...

Electron-Irradiation-Induced Degradation of Transfer Characteristics in Super-Junction VDMOSFET

High electric-field stress is an effective solution to the recovery of irradiated devices. In this paper, the dependence of the recovery level on the magnitude of gate voltage and duration is investigated. Compared with the scheme of high gate-bias voltage with a short stress time, the transfer characteristics are significantly recovered by...