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Zhang, Y. (author), Du, L. (author), Bäcke, Olof (author), Kalbfleisch, Sebastian (author), Zhang, Kouchi (author), Vollebregt, S. (author), Hörnqvist Colliander, Magnus (author)As the dimensions of interconnects in integrated circuits continue to shrink, an urgent need arises to understand the physical mechanism associated with electromigration. Using x-ray nanodiffraction, we analyzed the stresses in Blech-structured pure Cu lines subjected to different electromigration conditions. The results suggest that the...journal article 2024
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Mo, J. (author), Schaffar, Gerald J.K. (author), Du, L. (author), Maier-Kiener, Verena (author), Kiener, Daniel (author), Vollebregt, S. (author), Zhang, Kouchi (author)Silicon carbide (SiC) coated vertically aligned carbon nanotubes (VACNT) are attractive material for fabricating MEMS devices as an alternative for bulk micromachining of SiC. In order to examine the mechanical properties of SiC-CNT composites at high temperatures, we fabricated VACNT micro-pillars with different amounts of SiC coating and...conference paper 2024
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Mo, J. (author), Shankar, S. (author), Pezone, R. (author), Zhang, Kouchi (author), Vollebregt, S. (author)Silicon carbide (SiC) is recognized as an excellent material for microelectromechanical systems (MEMS), especially those operating in challenging environments, such as high temperature, high radiation, and corrosive environments. However, SiC bulk micromachining is still a challenge, which hinders the development of complex SiC MEMS. To...journal article 2024
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Li, J. (author), Vollebregt, S. (author), Zhang, Y. (author), Shekhar, A. (author), May, Alexander (author), van Driel, W.D. (author), Zhang, Kouchi (author)Due to the deficient passivation of the interface between silicon carbide and silicon dioxide, the defect-induced capture and release of trapped charges triggered by external Bias Temperature Stress (BTS) leads to parameter shifts and degraded device performance. This study models the trap-induced transient current in silicon carbide metal-oxide...conference paper 2024
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Mo, J. (author), Niu, Yunfan (author), May, Alexander (author), Rommel, Mathias (author), Rossi, Chiara (author), Romijn, J. (author), Zhang, Kouchi (author), Vollebregt, S. (author)Integrated circuits based on wide bandgap semiconductors are considered an attractive option for meeting the demand for high-temperature electronics. Here, we report an analog-to-digital converter fabricated in a silicon carbide complementary metal-oxide-semiconductor technology now available through Europractice. The MOSFET component in this...journal article 2024
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Mo, J. (author), LI, J. (author), Zhang, Y. (author), Romijn, J. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Vollebregt, S. (author)In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density...journal article 2023
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Sattari, R. (author), Hu, D. (author), Liu, X. (author), van Zeijl, H.W. (author), Vollebregt, S. (author), Zhang, Kouchi (author)The rapid development of power electronics has challenged the thermal integrity of semiconductor packaging. Further developments in this domain can be supported significantly by utilizing fast and flexible thermal characteristic evaluation. This study employs the transient dual interface method (TDIM) to characterize and compare the thermal...journal article 2023
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van Ginkel, H.J. (author), Mitterhuber, Lisa (author), van de Putte, Marijn Willem (author), Huijben, Mark (author), Vollebregt, S. (author), Zhang, Kouchi (author)Reducing the thermal conductivity of thermoelectric materials has been a field of intense research to improve the efficiency of thermoelectric devices. One approach is to create a nanostructured thermoelectric material that has a low thermal conductivity due to its high number of grain boundaries or voids, which scatter phonons. Here, we present...journal article 2023
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Zhang, Y. (author), Mo, J. (author), Cui, Z. (author), Vollebregt, S. (author), Zhang, Kouchi (author)The continuous downscaling of microelectronics has introduced many reliability issues on interconnect. Electromigration and dewetting are major reliability concerns in high-temperature micro- and nanoscale devices. In this paper, the local dewetting of copper thin film during the electromigration test was first found and investigated. When...conference paper 2023
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Copper Nanoparticle Sintering Enabled Hermetic Packaging With Fine Sealing Ring for MEMS ApplicationHu, D. (author), Shah, M.B. (author), Fan, J. (author), Vollebregt, S. (author), Zhang, Kouchi (author)Driving by the increased demand for hermetic packaging in the more than Moore (MtM) roadmap, a Cu nanoparticle sintering-enabled hermetic sealing solution was developed with a small-size sealing ring. The developed technology simplifies microfabrication and requires less surface roughness using a sinterable Cu nanoparticle paste. A 50μm size...journal article 2023
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Niu, Yunfan (author), Mo, J. (author), May, Alexander (author), Rommel, Mathias (author), Rossi, Chiara (author), Romijn, J. (author), Zhang, Kouchi (author), Vollebregt, S. (author)This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of...conference paper 2023
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Cui, Z. (author), Fan, X. (author), Zhang, Y. (author), Vollebregt, S. (author), Fan, J. (author), Zhang, Kouchi (author)This paper presented integrated electromigration (EM) studies through experiment, theory, and simulation. First, extensive EM tests were performed using Blech and standard wafer-level electromigration acceleration test (SWEAT)-like structures, which were fabricated on four-inch wafers. Second, a molecular dynamics (MD) simulation-based...journal article 2023
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Cui, Z. (author), Fan, X. (author), Zhang, Y. (author), Vollebregt, S. (author), Fan, J. (author), Zhang, Kouchi (author)This paper presented a comprehensive experimental and simulation study for thermomigration (TM) accompanying electromigration (EM) at elevated current densities. Both Blech and standard wafer-level electromigration acceleration test (SWEAT)-like test structures, with aluminum (Al) as a carrier, were used for testing and analysis. In Part I of...journal article 2023
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Romijn, J. (author), Vollebregt, S. (author), de Bie, Vincent G. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)The next generation of satellites will need to tackle tomorrow's challenges for communication, navigation and observation. In order to do so, it is expected that the amount of satellites in orbit will keep increasing, form smart constellations and miniaturize individual satellites to make access to space cost effective. To enable this next...journal article 2023
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Mo, J. (author), Shankar, S. (author), Zhang, Kouchi (author), Vollebregt, S. (author)Fabricating high-aspect-ratio (HAR) structures with silicon carbide (SiC) is a challenging task. This paper presents a silicon carbide (SiC) reinforced vertically aligned carbon nanotubes (VACNT) composite as a promising candidate to fabricate HAR MEMS devices for harsh environment applications. The use of a VACNT array allows the fast...conference paper 2023
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Zhang, Y. (author), Mo, J. (author), Vollebregt, S. (author), Zhang, Kouchi (author), May, Alexander (author), Erlbacher, Tobias (author)The 4H-silicon carbide (SiC) exhibits excellent material characteristics, particularly in high-temperature, high-power, high-frequency applications. However, the reliability of SiC-based devices operating in harsh environments is a critical concern. While time-dependent dielectric breakdown (TDDB) in conventional SiC devices has been extensively...conference paper 2023
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Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a...journal article 2022
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Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Leijtens, Johan (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are...journal article 2022
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Cui, Z. (author), Zhang, Y. (author), Hu, D. (author), Vollebregt, S. (author), Fan, J. (author), Fan, X. (author), Zhang, Kouchi (author)Understanding the atomic diffusion features in metallic material is significant to explain the diffusion-controlled physical processes. In this paper, using electromigration experiments and molecular dynamic (MD) simulations, we investigate the effects of grain size and temperature on the self-diffusion of polycrystalline aluminium (Al). The...journal article 2022
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van Ginkel, H.J. (author), Vollebregt, S. (author), Schmidt-Ott, A. (author), Zhang, Kouchi (author)A method is presented to directly measure the mass output of an impaction printer coupled with a spark ablation generator. It is based on a quartz crystal microbalance and shown to be reliable in quantifying mass deposition rate. Here, the method is demonstrated with an Au nanoparticle aerosol synthesized under several spark ablation and...journal article 2022