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- Stulemeijer, J. (author), Bakker, A.F. (author), Moerman, I. (author), Groen, F.H. (author), Smit, M.K. (author) journal article 1999
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- Gulski, E. (author), Smit, J.J. (author), Brooks, R. (author), Turner, M. (author) journal article 1999
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- Bukkems, H.G. (author), Herben, C.G.P. (author), Smit, M.K. (author), Groen, F.H. (author), Moerman, I. (author) journal article 1999
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- Herben, C.G.P. (author), Maat, D.H.P. (author), Leijtens, X.J.M. (author), Leys, M.R. (author), Oei, Y.S. (author), Smit, M.K. (author) journal article 1999
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- Herben, C.G.P. (author), Leijtens, X.J.M. (author), Maar, P. (author), Blok, H. (author), Smit, M.K. (author) journal article 1999
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- Hengst, S. (author), Smit, K. (author), Stoop, J.A. (author) book 1999
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- Gulski, E. (author), Wester, F.J. (author), Smit, J.J. (author), Seitz, P.N. (author), Turner, M. (author) journal article 2000
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- Zondervan, J.P. (author), Gulski, E. (author), Smit, J.J. (author) journal article 2000
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- van Bolhuis, J.P. (author), Gulski, E. (author), Smit, J.J. (author) journal article 2002
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- den Besten, J.H. (author), Dessens, M.P. (author), Herben, C.G.P. (author), Leijtens, X.J.M. (author), Groen, F.H. (author), Leys, M.R. (author), Smit, M.K. (author) journal article 2002
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- van Breen, H.J. (author), Gulski, E. (author), Smit, J.J. (author), Verhaart, H.F.A. (author), de Leeuw, W. (author), Krieg-Wezelenburg, M. (author) journal article 2002
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Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...journal article 2002
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Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with...journal article 2002
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- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2003
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- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2004
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- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2004
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- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2004
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- Caro, J. (author), Vink, I.D. (author), Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author), Loo, R. (author), Caymax, M. (author) journal article 2004
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Smit, G.D.J. (author)A dopant atom in a semiconductor, the solid state analogue of a hydrogen atom, has a Bohr radius of several nanometers. Because this length scale is close to being accessible by modern nanolithography, detection and control of charge and spin in a semiconductor down to the level of individual dopant atoms is within reach and provides the unique...doctoral thesis 2004
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- Morshuis, P.H.F. (author), Smit, J.J. (author) journal article 2005