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document
Stulemeijer, J. (author), Bakker, A.F. (author), Moerman, I. (author), Groen, F.H. (author), Smit, M.K. (author)
journal article 1999
document
Gulski, E. (author), Smit, J.J. (author), Brooks, R. (author), Turner, M. (author)
journal article 1999
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Bukkems, H.G. (author), Herben, C.G.P. (author), Smit, M.K. (author), Groen, F.H. (author), Moerman, I. (author)
journal article 1999
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Herben, C.G.P. (author), Maat, D.H.P. (author), Leijtens, X.J.M. (author), Leys, M.R. (author), Oei, Y.S. (author), Smit, M.K. (author)
journal article 1999
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Herben, C.G.P. (author), Leijtens, X.J.M. (author), Maar, P. (author), Blok, H. (author), Smit, M.K. (author)
journal article 1999
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Hengst, S. (author), Smit, K. (author), Stoop, J.A. (author)
book 1999
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Gulski, E. (author), Wester, F.J. (author), Smit, J.J. (author), Seitz, P.N. (author), Turner, M. (author)
journal article 2000
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Zondervan, J.P. (author), Gulski, E. (author), Smit, J.J. (author)
journal article 2000
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van Bolhuis, J.P. (author), Gulski, E. (author), Smit, J.J. (author)
journal article 2002
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den Besten, J.H. (author), Dessens, M.P. (author), Herben, C.G.P. (author), Leijtens, X.J.M. (author), Groen, F.H. (author), Leys, M.R. (author), Smit, M.K. (author)
journal article 2002
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van Breen, H.J. (author), Gulski, E. (author), Smit, J.J. (author), Verhaart, H.F.A. (author), de Leeuw, W. (author), Krieg-Wezelenburg, M. (author)
journal article 2002
document
Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)
We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...
journal article 2002
document
Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)
A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with...
journal article 2002
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Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author)
journal article 2003
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Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author)
journal article 2004
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Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author)
journal article 2004
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Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author)
journal article 2004
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Caro, J. (author), Vink, I.D. (author), Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author), Loo, R. (author), Caymax, M. (author)
journal article 2004
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Smit, G.D.J. (author)
A dopant atom in a semiconductor, the solid state analogue of a hydrogen atom, has a Bohr radius of several nanometers. Because this length scale is close to being accessible by modern nanolithography, detection and control of charge and spin in a semiconductor down to the level of individual dopant atoms is within reach and provides the unique...
doctoral thesis 2004
document
Morshuis, P.H.F. (author), Smit, J.J. (author)
journal article 2005
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