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Erratum: Electrical characteristics and photodetection mechanism of TiO
2
/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (J. Mater. Chem. C (2023) 11 (1704–1713) DOI: 10.1039/D2TC04491A)
Electrical characteristics and photodetection mechanism of TiO
2
/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction
Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO Sensor Using a Two-Step Gate Recess Technique
A high responsivity and controllable recovery ultraviolet detector based on a WO
3
gate AlGaN/GaN heterostructure with an integrated micro-heater
Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating
Suspended tungsten trioxide (WO
3
) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater
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