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Bian, Dong (author), Zhou, Xiaochen (author), Liu, Jianing (author), Li, Wenting (author), Shen, Danni (author), Zheng, Yufeng (author), Gu, Wenda (author), Jiang, Jingjun (author), Li, Mei (author), Chu, Xiao (author), Ma, Limin (author), Wang, Xiaolan (author), Zhang, Yu (author), Leeflang, M.A. (author), Zhou, J. (author)Biodegradable stents can provide scaffolding and anti-restenosis benefits in the short term and then gradually disappear over time to free the vessel, among which the Mg-based biodegradable metal stents have been prosperously developed. In the present study, a Mg-8.5Li (wt.%) alloy (RE- and Al-free) with high ductility (> 40%) was...journal article 2021
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Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Y. (author), Yang, Gaiying (author), Yu, H. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H 2 response at high...journal article 2020
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Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Yang (author), Yang, Gaiying (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high...journal article 2020