RULK_NE: Representing User Knowledge State in Search-as-Learning with Named Entities

A reliable representation of the user's knowledge state during a learning search session is crucial to understand their real information needs. When a search system is aware of such a state, it can adapt the search results and provide greater support for the user's learning objectives. A common practice to track the user's knowledge state is...

Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor

Semiconductor devices have been scaled to the point that transport can be dominated by only a single dopant atom. As a result, in a Si fin-type field effect transistor Kondo physics can govern transport when one electron is bound to the single dopant. Orbital (valley) degrees of freedom, apart from the standard spin, strongly modify the Kondo...

Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

Channel conductance measurements can be used as a tool to study thermally activated electron transport in the sub-threshold region of state-of-art FinFETs. Together with theoretical tight-binding (TB) calculations, this technique can be used to understand the dependence of the source-to-channel barrier height (Eb) and the active channel area ...

Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade

We report the observation of lifetime-enhanced transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower...

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

We present atomistic simulations of the D0 to D? charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measurements. A self-consistent field large-scale tight-binding method is used to compute the D? binding energies with a domain of over 1.4 million atoms, taking...

Single Ion Implantation into Si-Based Devices

Deterministic doping is crucial for overcoming dopant number variability in present nano-scale devices and for exploiting single atom degrees of freedom. The development of determinisitic doping schemes is required. Here, two approaches to the detection of single ion impact events in Si-based devices are reviewed. The first is via specialized...

Single Dopant Implantation into a Nanoscale MOSFET Devices

Heterointerface effects on the charging energy of the shallow D? ground state in silicon: Role of dielectric mismatch

Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. Experimental results indicate a strong reduction in the charging energy of isolated As dopants in Si nonplanar field effect transistors relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the...

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single...

Coherent transport through a double donor system in silicon

In this letter, we describe the observation of the interference of conduction paths induced by two donors in a nanoscale silicon transistor, resulting in a Fano resonance. This demonstrates the coherent exchange of electrons between two donors. In addition, the phase difference between the two conduction paths can be tuned by means of a magnetic...