Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile

This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping...

Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress

In this article, the avalanche withstand capability and transient failure model of commercial 1200 V asymmetric trench gate SiC MOSFETs are investigated by experiment and simulation under single-pulse unclamped inductive switching (UIS) conditions. The limiting avalanche current and limiting avalanche energy of the device are determined by...

Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET*

In this paper, a novel bubble-shift super junction (SJ) MOSFET structure is proposed, and its main static electrical parameters and reverse recovery characteristics are simulated by TCAD software tool. By designing the P-pillar ion implantation windows with a certain offset, the bubble-shift SJ-MOSFET contains a curved pillar region in the upper...

A TCAD Simulation Study on the Short-circuit Performance of 650V P-pillar Offset Super-junction MOSFET

The limitation of Silicon based power MOSFET was broken by the super-junction (SJ) structure, which can provide lower specific on-resistance and higher breakdown voltage compared with the conventional power MOSFET structure. Multi-epitaxial and multi-ion-implant technology, as a mature manufacturing process of the SJ structure, has been widely...