- Erratum: Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction (J. Mater. Chem. C (2023) 11 (1704–1713) DOI: 10.1039/D2TC04491A)
- Electrical characteristics and photodetection mechanism of TiO2/AlGaN/GaN heterostructure-based ultraviolet detectors with a Schottky junction
- A high responsivity and controllable recovery ultraviolet detector based on a WO3gate AlGaN/GaN heterostructure with an integrated micro-heater