Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study

With the increase in voltage level and current capacity of the insulated gate bipolar transistor (IGBT), the avalanche effect has become an important factor limiting the safe operating area (SOA) of the device. The hole injection into the p/n junction on the backside of the IGBT after avalanche is the main feature that distinguishes the...

Investigation of Unclamped Inductive Switch Characteristics in 4H-SiC MOSFETs With Different Cell Topologies

To investigate the unclamped inductive switch (UIS) characteristics, 1200 V silicon carbide (SiC) planar MOSFETs with four cell topologies of linear, current sharing linear, square, and hexagon are designed and manufactured. The experimental platform was built and tested. The results show that the single pulse avalanche energy density of the...

A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit

A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device...

Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach

Interfacial properties of Cu/SiO₂ in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO₂. The...

Interfacial properties of Cu/SiO2 using a multiscale modelling approach in electronic packages

Interfacial properties of Cu/SiO2 in semiconductor devices has continued to be the subject of challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. In...

Color Shift Modeling of Light-Emitting Diode Lamps in Step-Loaded Stress Testing

The color coordinate shift of light-emitting diode (LED) lamps is investigated by running three stress-loaded testing methods, namely step-up stress accelerated degradation testing, step-down stress accelerated degradation testing, and constant stress accelerated degradation testing. A power model is proposed as the statistical model of the...

Overdriving reliability of chip scale packaged LEDs: Quantitatively analyzing the impact of component

The objective of this study is to quantitatively evaluate the impacts of LED components on the overdriving reliability of high power white LED chip scale packages (CSPs). The reliability tests under room temperature are conducted over 1000 h in this study on CSP LEDs with overdriving currents. A novel method is proposed to investigate the...

A review of small heat pipes for electronics

Heat pipes (HPs) have received considerable attention in recent decades, especially in the field of cooling electronics, which requires the removal of added heat from an area of limited volume to the environment. Small HPs are widely used in electronic applications, which are normally limited by the compact structure and dimensions of the...

Thermal inductance in GaN devices

Using the analogue of the electric inductance, we reveal the properties of the thermal inductance in GaN-based light-emitting diode devices by testing their transient thermal behaviors. We find that the devices exhibit a transient thermal response under step-down or step-up currents and observe notable inductive phenomena of the temperature...