Searched for: author%3A%22Long%2C+J.%22
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de Beer, A. F. (author), McCall, R. T. (author), Long, J. W. (author), Tissier, M.F.S. (author), Reniers, A.J.H.M. (author)
The prediction of wave runup, as well as its components, time-averaged setup and the time-varying swash, is a key element of coastal storm hazard assessments, as wave runup controls the transitions between morphodynamic response types such as dune erosion and overwash, and the potential for flooding by wave overtopping. While theoretically...
journal article 2021
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Ishihara, R. (author), Baiano, A. (author), Chen, T. (author), Derakhshandeh, J. (author), Tajari Mofrad, M.R. (author), Danesh, M. (author), Saputra, N. (author), Long, J. (author), Beenakker, C.I.M. (author)
Single-grain Si TFTs have been fabricated using accurate 2D location control of large Si grain with the ?-Czochralski process. TFTs fabricated inside the crystalline islands of 6 ?m show a mobility (600cm2/Vs) as high as that of the SOI counterpart, despite of the low-temperature (<350oC) process. By applying a tensile stress into the grain, the...
journal article 2009
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Baiano, A. (author), Ishihara, R. (author), Saputra, N. (author), Long, J. (author), Karaki, N. (author), Inoue, S. (author), Metselaar, W. (author), Beenakker, C.I.M. (author)
Single Grain Thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by µ-Czochralski process have as high as SOI performance. To model them, BSIMSOI with a proper modification of the mobility is proposed. The model has been verified for n- and p-channel DC and low frequency AC conditions by comparison with measurement...
journal article 2007