Print Email Facebook Twitter SPICE Modeling of Single-Grain Si TFTs using BSIMSOI Title SPICE Modeling of Single-Grain Si TFTs using BSIMSOI Author Baiano, A. Ishihara, R. Saputra, N. Long, J. Karaki, N. Inoue, S. Metselaar, W. Beenakker, C.I.M. Faculty Electrical Engineering, Mathematics and Computer Science Department Microelectronics Date 2007-12-31 Abstract Single Grain Thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by µ-Czochralski process have as high as SOI performance. To model them, BSIMSOI with a proper modification of the mobility is proposed. The model has been verified for n- and p-channel DC and low frequency AC conditions by comparison with measurement results. Furthermore, preliminary circuit simulations are executed. To reference this document use: http://resolver.tudelft.nl/uuid:9e346035-0a86-45a6-98af-0249af0d3c9c DOI https://doi.org/10.1149/1.2767304 Publisher The Electrochemical Society ISSN 1938-5862 Source ECS Transactions, 8 (1), 2007 Part of collection Institutional Repository Document type journal article Rights © 2007 The Electrochemical Society Files PDF Baiano_2007.pdf 115.96 KB Close viewer /islandora/object/uuid:9e346035-0a86-45a6-98af-0249af0d3c9c/datastream/OBJ/view