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Lee, M.J. (author), Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Wang, Tzu Jui (author), Huang, Kuo Chin (author), Yamashita, Yuichiro (author), Yaung, Dun Nian (author), Charbon-Iwasaki-Charbon, E. (author)We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P<sup>+</sup>/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...journal article 2018
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Sarubbi, F. (author)Doping technologies for formation of ultrashallow and highly-doped p+ junctions are continuously demanded to face the challenges in front-end processing that have emerged due to the aggressive downscaling of vertical dimensions for future semiconductor devices. As an alternative to implantations, current solutions are based on in-situ boron (B)...doctoral thesis 2010