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Sammak, A. (author), Aminian, Mahdi (author), Nanver, L.K. (author), Charbon-Iwasaki-Charbon, E. (author)Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arrays of 300 pixels with each a size of 26 × 26 μm2. The processing of anode contacts at the...journal article 2016
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Sammak, A. (author), Qi, L. (author), Nanver, L.K. (author)The effectiveness of using nanometer-thin boron (PureB) layers as interdiffusion barrier to aluminum (Al) is studied for a contacting scheme specifically developed for fabricating germanium-on-silicon (Ge-on-Si) p+n photodiodes with an oxide-covered light entrance window. Contacting is achieved at the perimeter of the Ge-island anode directly to...journal article 2015
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Sammak, A. (author), Aminian, M. (author), Qi, L. (author), De Boer, W.B. (author), Charbon, E. (author), Nanver, L.K. (author)The selective epitaxial growth of Ge-on-Si followed by in-situ deposition of a nm-thin Ga/B layer stack (PureGaB) has previously been shown to be a robust CMOS-compatible process for fabrication of Ge-on-Si photodiodes. In this paper, strategies to improve the control and reproducibility of PureGaB Ge-on-Si photodiode fabrication by reducing the...journal article 2014
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion...journal article 2013
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Mok Kai Rine, C. (author), Vlooswijk, A.H.G. (author), Mohammadi, V. (author), Nanver, L.K. (author)Chemical-vapor-deposited pure boron (PureB) layers can be used as a source of p-type boron dopants for thermal diffusion into silicon during a drive-in anneal. In this work, the effect of thermally annealing PureB layers is investigated in terms of surface morphology and electrical properties. The presence of a few nanometer-thick PureB layer on...journal article 2013
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemicalvapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism...journal article 2013
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Sammak, A. (author), De Boer, W.B. (author), Nanver, L.K. (author)A standard Si/SiGe ASM CVD reactor that was recently modified for merging GaAs and Si epitaxial growth in one system is utilized to achieve intrinsic and doped epitaxial Ge-on-Si with low threading dislocation and defect densities. For this purpose, the system is equipped with 2% diluted GeH4 as the main precursor gas for Ge deposition; and 0.7%...journal article 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)The so-called local-loading effect is studied for pure boron (PureB) depositions from B2H6 in a chemical-vapor deposition (CVD) reactor. This effect occurs because the boron is not deposited on oxide and this increases the deposition rate (DR) of boron in open Si areas in the oxide. Experiments are performed for wide range of local-oxide ratio ...journal article 2012
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Nanver, L.K. (author), Sammak, A. (author), Mohammadi, V. (author), Mok, K.R.C. (author), Qi, L. (author), Sakic, A. (author), Golshani, N. (author), Darakhshandeh, J. (author), Scholtes, T.M.L. (author), De Boer, W.B. (author)Envisioning wide future relevance, work is reviewed here on the pure dopant deposition of boron (PureB), gallium (PureGa) and the combination of the two (PureGaB), as used in the fabrication of nanometer shallow p+n Si and/or Ge diodes. Focus is placed on the special properties that have put these diodes in a class apart: their ideal electrical...journal article 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Nanver, L.K. (author)In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B2H6) as gas source on a non-rotating silicon wafer. The model takes into consideration the...journal article 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Nanver, L.K. (author)Surface reaction mechanisms are investigated to determine the activation energies of pure boron (PureB) layer deposition at temperatures from 350?°C to 850?°C when using chemical-vapor deposition from diborane in a commercial Si/SiGe epitaxial reactor with either hydrogen or nitrogen as carrier gas. Three distinguishable regions are identified...journal article 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned...journal article 2012
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Mohammadi, V. (author), De Boer, W.B. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)The pattern dependency of pure-boron (PureB) layer chemicalvapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned...journal article 2012
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Sakic, A. (author), Scholtes, T.L.M. (author), De Boer, W.B. (author), Golshani, N. (author), Derakhshandeh, J. (author), Nanver, L.K. (author)An arsenic doping technique for depositing up to 40-?m-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 1011 cm?3, a value that is solely limited by the cleanness of the epitaxial reactor...journal article 2011
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Biasotto, C. (author), Gonda, V. (author), Nanver, L.K. (author), Scholtes, T.L.M. (author), Van der Cingel, J. (author), Vidal, D. (author), Jovanovic, V. (author)Good-quality ultrashallow n + p junctions are formed using 5-keV amorphizing As+ implantations followed by a single-shot excimer laser anneal for dopant activation. By using an implant that is self-aligned to the contact windows etched in an oxide isolation layer, straightforward processing of the diodes is achieved with postimplantation...journal article 2011
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Shi, L. (author), Sarubbi, F. (author), Nanver, L.K. (author), Kroth, U. (author), Gottwald, A. (author), Nihtianov, S. (author)In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light and for the extreme-ultraviolet (EUV) spectral range. The devices were developed and fabricated at the Delft Institute of Microsystems and Nanoelectronics (DIMES), TU Delft. In this paper, we...journal article 2010
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Sammak, A. (author), De Boer, W. (author), Van den Bogaard, A. (author), Nanver, L.K. (author)A commercial Chemical Vapor Deposition (CVD) system, the ASMI Epsilon 2000 designed for Si and SiGe epitaxy, has, for the first time, been equipped for the growth of GaAs compounds in a manner that does not exclude the use of the system also for Si-based depositions. With the new system, intrinsic, Si-doped and Ge-doped GaAs epitaxial layers...journal article 2010
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Biasotto, C. (author), Gonda, V. (author), Nanver, L.K. (author), Van der Cingel, J. (author), Jovanovic, V. (author)In the past it has been shown that ultrashallow junctions with minimum lateral dimensions can be made by implanting self-aligned to the contact window and using one-shot excimer laser annealing (ELA) to activate the dopants. Besides the recrystallization of the implanted Si, the final structuring at the contact window perimeter is very important...journal article 2009
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Sarubbi, F. (author), Scholtes, T.L.M. (author), Nanver, L.K. (author)Nanometer-thick amorphous boron (?-B) layers were formed on (100) Si during exposure to diborane (B2H6) in a chemical vapor deposition (CVD) system, either at atmospheric or reduced pressures, at temperatures down to 500°C. The dependence of the growth mechanism on processing parameters was investigated by analytical techniques, such as...journal article 2009
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Nanver, L.K. (author), Schellevis, H. (author), Scholtes, T.L.M. (author), La Spina, L. (author), Lorito, G. (author), Sarubbi, F. (author), Gonda, V. (author), Popadic, M. (author), Buisman, K. (author), De Vreede, L.C.N. (author)This paper reviews special RF/microwave silicon device implementations in a process that allows two-sided contacting of the devices: the back-wafer contacted silicon-on-glass (SOG) substrate-transfer technology (STT) developed at DIMES. In this technology, metal transmission lines can be placed on the low-loss glass substrate, while the...journal article 2009