Energy deposition characteristics of nanosecond dielectric barrier discharge plasma actuators: Influence of dielectric material

An experimental study aimed at the characterization of energy deposition of nanosecond Dielectric Barrier Discharge (ns-DBD) plasma actuators was carried out. Special attention was given on the effect of the thickness and material used for dielectric barrier. The selected materials for this study were polyimide film (Kapton), polyamide based...

Terahertz near-field microspectroscopy

Using near-field, terahertz time-domain spectroscopy (THz-TDS), we investigate how the addition of a dielectric material into a subwavelength-diameter, cylindrical waveguide affects its transmission properties. The THz electric near-field is imaged with deep subwavelength resolution as it emerges from filled and unfilled waveguides....

Contribution of dielectrics to frequency and noise of NbTiN superconducting resonators

We study NbTiN resonators by measurements of the temperature dependent resonance frequency and frequency noise. Additionally, resonators are studied covered with SiOx dielectric layers of various thicknesses. The resonance frequency develops a nonmonotonic temperature dependence with increasing SiOx layer thickness. The increase in the noise is...

Magnetostatic waves in layered materials and devices

Magnetostatic wave propagation in multilayers of ferro-/ferrimagnetic and nonmagnetic, dielectric slabs is investigated using an effective medium theory and the transfer matrix method. The propagation in multilayers with antiparallel directions of magnetization is analyzed, in particular. Antiparallel multilayers support (overall) bulk waves at...

Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single...

Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors

We have performed a comparative study of rubrene single-crystal field-effect transistors fabricated using different materials as gate insulator. For all materials, highly reproducible device characteristics are obtained. The achieved reproducibility permits one to observe that the mobility of the charge carriers systematically decreases with...