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Mulder, J.T. (author), Kirkwood, N.R.M. (author), De Trizio, Luca (author), Li, Chen (author), Bals, Sara (author), Manna, L. (author), Houtepen, A.J. (author)
Indium phosphide quantum dots (QDs) have drawn attention as alternatives to cadmium- and lead-based QDs that are currently used as phosphors in lamps and displays. The main drawbacks of InP QDs are, in general, a lower photoluminescence quantum yield (PLQY), a decreased color purity, and poor chemical stability. In this research, we attempted...
journal article 2020
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Crisp, R.W. (author), Hashemi, Fatemeh S.M. (author), Alkemade, J. (author), Kirkwood, N.R.M. (author), Grimaldi, G. (author), Kinge, S.S. (author), Siebbeles, L.D.A. (author), van Ommen, J.R. (author), Houtepen, A.J. (author)
To improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film growth at the sub-nanometer scale and results in conformal...
journal article 2020
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Crisp, R.W. (author), Kirkwood, N.R.M. (author), Grimaldi, G. (author), Kinge, Sachin (author), Siebbeles, L.D.A. (author), Houtepen, A.J. (author)
InP and InZnP colloidal quantum dots (QDs) are promising materials for application in light-emitting devices, transistors, photovoltaics, and photocatalytic cells. In addition to possessing an appropriate bandgap, high absorption coefficient, and high bulk carrier mobilities, the intrinsic toxicity of InP and InZnP is much lower than for...
journal article 2018