Titanium Trisulfide Nanosheets and Nanoribbons for Field Emission-Based Nanodevices

The field emission (FE) properties of TiS3 nanosheets and nanoribbons, synthesized by direct sulfuration of bulk titanium, are investigated. The nanosheets show an enhanced FE behavior with a low turn-on field of ∼0.3 V/μm, required for drawing an emission current density of ∼10 μA/cm2. Interestingly, the TiS3 nanosheet emitter delivered a...

Raman Fingerprint of Pressure-Induced Phase Transitions in TiS₃Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions

Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of their robust mechanical and thermal properties and applications in opto- and nanoelectronics devices. We report the pressure dependence of out-of-plane Ag Raman modes in high quality few-layer titanium trisulfide ...

Multi-terminal electronic transport in boron nitride encapsulated TiS₃ nanosheets

We have studied electrical transport as a function of carrier density, temperature and bias in multi-terminal devices consisting of hexagonal boron nitride (h-BN) encapsulated titanium trisulfide (TiS₃) sheets. Through the encapsulation with h-BN, we observe metallic behavior and high electron mobilities. Below ∼60 K an increase in...

Large birefringence and linear dichroism in TiS₃ nanosheets

TiS₃ nanosheets have proven to be promising candidates for ultrathin optoelectronic devices due to their direct narrow band-gap and the strong light-matter interaction. In addition, the marked in-plane anisotropy of TiS₃ is appealing for the fabrication of polarization sensitive optoelectronic devices. Herein, we study...

High Current Density Electrical Breakdown of TiS₃ Nanoribbon-Based Field-Effect Transistors

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density...

Titanium trisulfide (TiS3): A 2D semiconductor with quasi-1D optical and electronic properties

We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on...