A Thin and Low-Inductance 1200 V SiC MOSFET Fan-Out Panel-Level Packaging With Thermal Cycling Reliability Evaluation

SiC MOSFET is mainly characterized by the higher electric breakdown field, higher thermal conductivity, and lower switching loss enabling high breakdown voltage, high-temperature operation, and high switching frequency. However, their performances are considerably limited by the high parasitic inductance and poor heat dissipation capabilities...