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Wei, J. (author), Ye, H. (author), Van Zeijl, H.W. (author), Sarro, P.M. (author), Zhang, G.Q. (author)
A micro-electro-mechanical-system (MEMS) based, temperature triggered, switch is developed as a cost-effective solution for smart cooling control of solid-state-lighting systems. The switch (1.0x0.4 mm2) is embedded in a silicon substrate and fabricated with a single-mask 3D micro-machining process. The device switches on at a designed...
journal article 2012
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Sokolovskij, R. (author), Sun, J. (author), Santagata, F. (author), Iervolino, E. (author), Li, S. (author), Zhang, G.Y. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A method for highly controllable etching of AlGaN/GaN for the fabrication of high sensitivity HEMT based sensors is developed. The process consists of cyclic oxidation of nitride with O<sub>2</sub> plasma using ICP-RIE etcher followed by wet etching of the oxidized layer. Previously reported cyclic oxidation-based GaN etching obtained very...
journal article 2016
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Silvestri, C. (author), Riccio, M. (author), Poelma, R.H. (author), Morana, B. (author), Vollebregt, S. (author), Santagata, F. (author), Irace, A. (author), Zhang, G.Q. (author), Sarro, P.M. (author)
Thermal material properties play a fundamental role in the thermal management of microelectronic systems. The porous nature of carbon nanotube (CNT) arrays results in a very high surface area to volume ratio, which makes the material attractive for surface driven heat transfer mechanisms. Here, we report on the heat transfer performance of...
journal article 2016
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Li, X. (author), Wei, L. (author), Poelma, René H. (author), Vollebregt, S. (author), Wei, J. (author), Urbach, Paul (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
This paper presents a tuneable binary amplitude Fresnel lens produced by wafer-level microfabrication. The Fresnel lens is fabricated by encapsulating lithographically defined vertically aligned carbon nanotube (CNT) bundles inside a polydimethyl-siloxane (PDMS) layer. The composite lens material combines the excellent optical absorption...
journal article 2016
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Sokolovskij, R. (author), Iervolino, E. (author), Zhao, Changhui (author), Wang, F. (author), Yu, Hongyu (author), Santagata, F. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
This paper reports on the layout optimization of Pt-AlGaN/GaN HEMT-sensors for enhancing hydrogen sensor performance. Sensors with gate width and length ratios W<sub>g</sub>/L<sub>g</sub> from 0.25 to 10 were designed, fabricated and tested for the detection of hydrogen gas at 200 °C. Sensitivity, sensing current variation and transient...
conference paper 2017
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Silvestri, C. (author), Riccio, Michele (author), Poelma, René H. (author), Jovic, A. (author), Morana, B. (author), Vollebregt, S. (author), Irace, Andrea (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
The high aspect ratio and the porous nature of spatially oriented forest-like carbon nanotube (CNT) structures represent a unique opportunity to engineer a novel class of nanoscale assemblies. By combining CNTs and conformal coatings, a 3D lightweight scaffold with tailored behavior can be achieved. The effect of nanoscale coatings, aluminum...
journal article 2018
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Sokolovskij, R. (author), Zhang, Jian (author), Iervolino, E. (author), Zhao, Changhui (author), Santagata, F. (author), Wang, F. (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H<sub>2</sub>S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal...
journal article 2018
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Santagata, F. (author), Sun, J. (author), Iervolino, E. (author), Yu, H. (author), Wang, F. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author), Zhang, Guoyi (author)
Purpose: The purpose of this paper is to demonstrate a novel 3D system-in-package (SiP) approach. This new packaging approach is based on stacked silicon submount technology. As demonstrators, a smart lighting module and a sensor systems were successfully developed by using the fabrication and assembly process described in this paper. Design...
journal article 2018
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Sun, J. (author), Zhan, Teng (author), Liu, Zewen (author), Wang, Junxi (author), Yi, Xiaoyan (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively...
journal article 2019
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Sun, J. (author), Zhan, Teng (author), Liu, Zewen (author), Wang, Junxi (author), Yi, Xiaoyan (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A suspended WO<sub>3</sub>-gate AlGaN/GaN heterostructure photodetector integrated with a micro-heater is micro-fabricated and characterized for ultraviolet photo detection. The transient optical characteristics of the photodetector at different temperatures are studied. The 2DEG-based photodetector shows a recovery (170 s) time under 240 nm...
journal article 2019
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Sun, J. (author), Sokolovskij, R. (author), Iervolino, E. (author), Santagata, F. (author), Liu, Zewen (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO 3 ) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working...
journal article 2019
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Zhang, B. (author), Wei, J. (author), Bottger, A.J. (author), van Zeijl, H.W. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
We report the design, fabrication and experimental investigation of a MEMS micro-hotplate (MHP) for fast time-resolved X-ray diffraction (TRXRD) study of Cu nanoparticle paste (nanoCu paste) sintering process. The device and its system are designed to have a 60 ms minimum time interval, uniform temperature distribution and variant gas...
conference paper 2019
document
Sun, J. (author), Sokolovskij, R. (author), Iervolino, E. (author), Liu, Zewen (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
We developed an AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO<sub>3</sub>) nano-film modified gate for nitrogen dioxide (NO<sub>2</sub>) detection. The device has a suspended circular membrane structure and an integrated micro-heater. The thermal characteristic of the Platinum (Pt) micro-heater and the...
journal article 2019
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Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Y. (author), Yang, Gaiying (author), Yu, H. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H 2 response at high...
journal article 2020
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Aydogmus, H. (author), van Ginkel, H.J. (author), Mastrangeli, Massimo (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
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poster 2020
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Sun, J. (author), Zhang, Shuo (author), Zhan, Teng (author), Liu, Zewen (author), Wang, Junxi (author), Yi, Xiaoyan (author), Li, Jinmin (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A high responsivity and controllable recovery ultraviolet (UV) photodetector based on a tungsten oxide (WO<sub>3</sub>) gate AlGaN/GaN heterostructure with an integrated micro-heater is reported for the first time. The WO<sub>3</sub>nanolayer was deposited by physical vapor deposition (PVD) for deep UV absorption and the micro-heater was...
journal article 2020
document
Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Yang (author), Yang, Gaiying (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high...
journal article 2020
document
Sun, J. (author), Hu, D. (author), Liu, Zewen (author), Middelburg, L.M. (author), Vollebregt, S. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
A micro-scale pressure sensor based on suspended AlGaN/GaN heterostructure is reported with non-linear sensitivity. By sealing the cavity, vacuum sensing at various temperatures was demonstrated. To validate the proposed concept of the AlGaN/GaN vacuum sensor, a 700 µm diameter circular membrane was electrically characterized under applied...
journal article 2020
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Sun, J. (author), Zhan, Teng (author), Sokolovskij, R. (author), Liu, Zewen (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)
Based on our proposed precision two-step gate recess technique, a suspended gate-recessed Pt/AlGaN/GaN heterostructure gas sensor integrated with a micro-heater is fabricated and characterized. The controllable two-step gate recess etching method, which includes O2 plasma oxidation of nitride and wet etching, improves gas sensing performance....
journal article 2021
document
Romijn, J. (author), Middelburg, L.M. (author), Vollebregt, S. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)
Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...
conference paper 2021
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