Modeling and Analysis of SRAM PUF Bias Patterns in 14nm and 7nm FinFET Technology Nodes

SRAM Physical Unclonable Functions (PUFs) are one of the popular forms of PUFs that can be used to generate unique identifiers and randomness for security purposes. Hence, their resilience to attacks is crucial. The probability of attacks increases when the SRAM PUF start-up values follow a predictable pattern which we refer to as bias. In this...

Reliability Analysis of FinFET-Based SRAM PUFs for 16nm, 14nm, and 7nm Technology Nodes

SRAM Physical Unclonable Functions (PUFs) are among other things today commercially used for secure primitives such as key generation and authentication. The quality of the PUFs and hence the security primitives, depends on intrinsic variations which are technology dependent. Therefore, to sustain the commercial usage of PUFs for cutting-edge...

Modeling Static Noise Margin for FinFET based SRAM PUFs

In this paper, we develop an analytical PUF model based on a compact FinFET transistor model that calculates the PUF stability (i.e. PUF static noise margin (PSNM)) for FinFET based SRAMs. The model enables a quick design space exploration and may be used to identify critical parameters that affect the PSNM. The analytical model is validated...