SPICE Modeling of Single-Grain Si TFTs using BSIMSOI

Single Grain Thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by µ-Czochralski process have as high as SOI performance. To model them, BSIMSOI with a proper modification of the mobility is proposed. The model has been verified for n- and p-channel DC and low frequency AC conditions by comparison with measurement...

Preferred <100> Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation

Clear preference of <100>- orientation in self-assembled poly- Si is observed for the first time not only in surface, but also in-plane orientations. This textured poly-Si can be used for TFT active channel, expecting a high performance with an excellent uniformity; or can be used as a seed layer for orientation controlling.

Preferred <100> Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation

(100)-textured self-assembled square-shaped polycrystalline silicon grains by multiple shot excimer laser crystallization

Strong preference for (100) surface and in-plane orientations has been observed in polycrystalline silicon film on SiO2 after crystallization with multiple excimer laser pulses. Laser induced periodic surface structure (LIPSS) is developed in the film, constructing self-assembled square-shaped grains. The clear texture can be observed in a...

Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain

Single-grain Si TFTs with ECR-PECVD gate SiO/sub 2/