Searched for: collection%3Air
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document
Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)
The transient properties of single grain–thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some...
journal article 2006
document
He, M. (author), Ishihara, R. (author), Metselaar, W. (author), Beenakker, K. (author)
Strong preference for (100) surface and in-plane orientations has been observed in polycrystalline silicon film on SiO2 after crystallization with multiple excimer laser pulses. Laser induced periodic surface structure (LIPSS) is developed in the film, constructing self-assembled square-shaped grains. The clear texture can be observed in a...
journal article 2006
document
Yan, F. (author), Migliorato, P. (author), Ishihara, R. (author)
The influence of twin boundaries on the characteristics of single grain-silicon thin film transistors has been analyzed by three-dimensional simulation. The simulations show that the orientation and the location of a twin boundary could affect the field-effect mobility and the leakage current of a device. The field-effect mobility increases with...
journal article 2007
document
Matsuki, N. (author), Ishihara, R. (author), Baiano, A. (author), Beenakker, C.I.M. (author)
We used scanning capacitance microscopy (SCM) to investigate the electrical activity of grain boundaries consisting of random and coincidence-site-lattice (CSL) boundaries in location-controlled silicon islands, which were fabricated using the ?-Czochralski process with an excimer laser. The SCM results suggest that the electrical activity of...
journal article 2008
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Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Kawajiri, R. (author), Shimoda, T. (author), Beenakker, C.I.M. (author), Ishihara, R. (author)
Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350?°C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices...
journal article 2013
document
Trifunovic, M. (author), Shimoda, T. (author), Ishihara, R. (author)
Printing electronics has led to application areas which were formerly impossible with conventional electronic processes. Solutions are used as inks on top of large areas at room temperatures, allowing the production of fully flexible circuitry. Commonly, research in these inks have focused on organic and metal-oxide ink materials due to their...
journal article 2015
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