Avalanche-mode Si light-emitting transistor for narrow-band emission near 760 nm

We report an avalanche-mode light-emitting transistor (AMLET) in silicon (Si), based on a lateral bipolar junction, which emits light near 760 nm optical wavelength with a record low bandwidth of 38 nm. The AMLET, designed in a CMOS-compatible silicon-on-insulator (SOI) photonics platform, is optically confined within a 0.21 ∼\μ m thick SOI...

Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED

The CMOS silicon avalanche-mode light-emitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However,...