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Searched for: department%3A%22Electrical%255C%252BSustainable%255C%252BEnergy%22
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Quantum confinement and band offsets in amorphous silicon quantum wells
Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters
Atomistic Models of Amorphous Semiconductors
Atomistic models of hydrogenated amorphous silicon nitride from first principles
First-principles study of hydrogenated amorphous silicon
Searched for: department%3A%22Electrical%255C%252BSustainable%255C%252BEnergy%22
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